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1 IPS80R1K4P7 rev.2.0,2016-07-05 final data sheet ipaksl mosfet 800vcoolmosap7powertransistor thelatest800vcoolmos?p7seriessetsanewbenchmarkin800v superjunctiontechnologiesandcombinesbest-in-classperformancewith stateoftheartease-of-use,resultingfrominfineonsover18years pioneeringsuperjunctiontechnologyinnovation. features ?best-in-classfomr ds(on) *e oss ;reducedq g ,c iss ,andc oss ?best-in-classdpakr ds(on) ?best-in-classv (gs)th of3vandsmallestv (gs)th variationof0.5v ?integratedzenerdiodeesdprotection ?best-in-classcoolmos?qualityandreliability;qualifiedforindustrial gradeapplicationsaccordingtojedec(j-std20andjesd22) ?fullyoptimizedportfolio benefits ?best-in-classperformance ?enablinghigherpowerdensitydesigns,bomsavingsandlower assemblycosts ?easytodriveandtoparallel ?betterproductionyieldbyreducingesdrelatedfailures ?lessproductionissuesandreducedfieldreturns ?easytoselectrightpartsforfinetuningofdesigns applications recommendedforhardandsoftswitchingflybacktopologiesforled lighting,lowpowerchargersandadapters,audio,auxpowerand industrialpower.alsosuitableforpfcstageinconsumerapplications andsolar. pleasenote: formosfetparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyrecommended. table1keyperformanceparameters parameter value unit v ds @ t j=25c 800 v r ds(on),max 1.4 w q g,typ 10 nc i d 4 a e oss @ 500v 0.9 j v gs(th),typ 3 v esd class (hbm) 2 - type/orderingcode package marking relatedlinks IPS80R1K4P7 pg-to 251 80r1k4p7 see appendix a tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
2 800vcoolmosap7powertransistor IPS80R1K4P7 rev.2.0,2016-07-05 final data sheet tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 appendix a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
3 800vcoolmosap7powertransistor IPS80R1K4P7 rev.2.0,2016-07-05 final data sheet 1maximumratings at t j =25c,unlessotherwisespecified table2maximumratings values min. typ. max. parameter symbol unit note/testcondition continuous drain current 1) i d - - - - 4 2.7 a t c =25c t c =100c pulsed drain current 2) i d,pulse - - 8.9 a t c =25c avalanche energy, single pulse e as - - 8 mj i d =0.6a; v dd =50v avalanche energy, repetitive e ar - - 0.07 mj i d =0.6a; v dd =50v avalanche current, repetitive i ar - - 0.6 a - mosfet dv/dt ruggedness dv/dt - - 100 v/ns v ds =0to400v gate source voltage v gs -20 -30 - - 20 30 v static; ac (f>1 hz) power dissipation p tot - - 32 w t c =25c operating and storage temperature t j , t stg -55 - 150 c - continuous diode forward current i s - - 3 a t c =25c diode pulse current 2) i s,pulse - - 8.9 a t c =25c reverse diode dv/dt 3) dv/dt - - 1 v/ns v ds =0to400v, i sd <=0.7a, t j =25c maximum diode commutation speed 3) di f /dt - - 50 a/ m s v ds =0to400v, i sd <=0.7a, t j =25c 2thermalcharacteristics table3thermalcharacteristics values min. typ. max. parameter symbol unit note/testcondition thermal resistance, junction - case r thjc - - 3.9 c/w - thermal resistance, junction - ambient r thja - - 62 c/w leaded thermal resistance, junction - ambient for smd version r thja - - - c/w n.a soldering temperature, wavesoldering only allowed at leads t sold - - 260 c 1.6mm (0.063 in.) from case for 10s 1) limited by t j max . maximum duty cycle d=0.5 2) pulse width t p limited by t j,max 3) v dclink =400v; v ds,peak < v (br)dss ;identicallowsideandhighsideswitchwithidentical r g ; t cond <2 m s tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
4 800vcoolmosap7powertransistor IPS80R1K4P7 rev.2.0,2016-07-05 final data sheet 3electricalcharacteristics at t j =25c,unlessotherwisespecified table4staticcharacteristics values min. typ. max. parameter symbol unit note/testcondition drain-source breakdown voltage v (br)dss 800 - - v v gs =0v, i d =1ma gate threshold voltage v gs(th) 2.5 3 3.5 v v ds = v gs , i d =0.07ma zero gate voltage drain current i dss - - - 10 1 - m a v ds =800v, v gs =0v, t j =25c v ds =800v, v gs =0v, t j =150c gate-source leakage curent incl. zener diode i gss - - 1 a v gs =20v, v ds =0v drain-source on-state resistance r ds(on) - - 1.2 3.1 1.4 - w v gs =10v, i d =1.4a, t j =25c v gs =10v, i d =1.4a, t j =150c gate resistance r g - 1.5 - w f =250khz,opendrain table5dynamiccharacteristics values min. typ. max. parameter symbol unit note/testcondition input capacitance c iss - 250 - pf v gs =0v, v ds =500v, f =250khz output capacitance c oss - 6.5 - pf v gs =0v, v ds =500v, f =250khz effective output capacitance, energy related 1) c o(er) - 8 - pf v gs =0v, v ds =0to500v effective output capacitance, time related 2) c o(tr) - 97 - pf i d =constant, v gs =0v, v ds =0to500v turn-on delay time t d(on) - 10 - ns v dd =400v, v gs =13v, i d =1.4a, r g =22 w rise time t r - 8 - ns v dd =400v, v gs =13v, i d =1.4a, r g =22 w turn-off delay time t d(off) - 40 - ns v dd =400v, v gs =13v, i d =1.4a, r g =22 w fall time t f - 20 - ns v dd =400v, v gs =13v, i d =1.4a, r g =22 w table6gatechargecharacteristics values min. typ. max. parameter symbol unit note/testcondition gate to source charge q gs - 1 - nc v dd =640v, i d =1.4a, v gs =0to10v gate to drain charge q gd - 5 - nc v dd =640v, i d =1.4a, v gs =0to10v gate charge total q g - 10 - nc v dd =640v, i d =1.4a, v gs =0to10v gate plateau voltage v plateau - 4.5 - v v dd =640v, i d =1.4a, v gs =0to10v 1) c o(er) isafixedcapacitancethatgivesthesamestoredenergyas c oss while v ds isrisingfrom0to500v 2) c o(tr) isafixedcapacitancethatgivesthesamechargingtimeas c oss while v ds isrisingfrom0to500v tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
5 800vcoolmosap7powertransistor IPS80R1K4P7 rev.2.0,2016-07-05 final data sheet table7reversediodecharacteristics values min. typ. max. parameter symbol unit note/testcondition diode forward voltage v sd - 0.9 - v v gs =0v, i f =1.4a, t f =25c reverse recovery time t rr - 800 - ns v r =400v, i f =0.7a,d i f /d t =50a/s reverse recovery charge q rr - 5 - c v r =400v, i f =0.7a,d i f /d t =50a/s peak reverse recovery current i rrm - 9 - a v r =400v, i f =0.7a,d i f /d t =50a/s tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
6 800vcoolmosap7powertransistor IPS80R1K4P7 rev.2.0,2016-07-05 final data sheet 4electricalcharacteristicsdiagrams diagram1:powerdissipation t c [c] p tot [w] 0 25 50 75 100 125 150 0 5 10 15 20 25 30 35 p tot =f( t c ) diagram2:safeoperatingarea v ds [v] i d [a] 10 0 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 10 1 10 2 1 s 10 s 100 s 1 ms 10 ms dc i d =f( v ds ); t c =25c; d =0;parameter: t p diagram3:safeoperatingarea v ds [v] i d [a] 10 0 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 10 1 10 2 1 s 10 s 100 s 1 ms 10 ms dc i d =f( v ds ); t c =80c; d =0;parameter: t p diagram4:max.transientthermalimpedance t p [s] z thjc [k/w] 10 -5 10 -4 10 -3 10 -2 10 -1 10 -1 10 0 10 1 0.5 0.2 0.1 0.05 0.02 0.01 single pulse z thjc =f( t p );parameter: d=t p / t tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
7 800vcoolmosap7powertransistor IPS80R1K4P7 rev.2.0,2016-07-05 final data sheet diagram5:typ.outputcharacteristics v ds [v] i d [a] 0 5 10 15 20 0 2 4 6 8 10 12 20 v 10 v 8 v 7 v 6 v 5.5 v 5 v 4.5 v i d =f( v ds ); t j =25c;parameter: v gs diagram6:typ.outputcharacteristics v ds [v] i d [a] 0 5 10 15 20 0 1 2 3 4 5 6 7 20 v 10 v 8 v 7 v 6 v 5.5 v 5 v 4.5 v i d =f( v ds ); t j =125c;parameter: v gs diagram7:typ.drain-sourceon-stateresistance i d [a] r ds(on) [ w ] 0 2 4 6 8 10 1.4 2.4 3.4 4.4 5.4 6.4 5 v 5.5 v 6 v 6.5 v 7 v 10 v r ds(on) =f( i d ); t j =125c;parameter: v gs diagram8:drain-sourceon-stateresistance t j [c] r ds(on) [ w ] -50 -25 0 25 50 75 100 125 150 0.1 0.6 1.1 1.6 2.1 2.6 3.1 98% typ r ds(on) =f( t j ); i d =1.4a; v gs =10v tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
8 800vcoolmosap7powertransistor IPS80R1K4P7 rev.2.0,2016-07-05 final data sheet diagram9:typ.transfercharacteristics v gs [v] i d [a] 0 2 4 6 8 10 12 0 1 2 3 4 5 6 7 8 9 10 25 c 150 c i d =f( v gs ); v ds =20v;parameter: t j diagram10:typ.gatecharge q gate [nc] v gs [v] 0 2 4 6 8 10 0 1 2 3 4 5 6 7 8 9 10 120 v 640 v v gs =f( q gate ); i d =1.4apulsed;parameter: v dd diagram11:forwardcharacteristicsofreversediode v sd [v] i f [a] 0.0 0.5 1.0 1.5 2.0 10 -1 10 0 10 1 10 2 25 c 125 c i f =f( v sd );parameter: t j diagram12:avalancheenergy t j [c] e as [mj] 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8 9 e as =f( t j ); i d =0.6a; v dd =50v tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
9 800vcoolmosap7powertransistor IPS80R1K4P7 rev.2.0,2016-07-05 final data sheet diagram13:drain-sourcebreakdownvoltage t j [c] v br(dss) [v] -75 -50 -25 0 25 50 75 100 125 150 175 700 750 800 850 900 950 v br(dss) =f( t j ); i d =1ma diagram14:typ.capacitances v ds [v] c [pf] 0 100 200 300 400 500 10 -1 10 0 10 1 10 2 10 3 10 4 ciss coss crss c =f( v ds ); v gs =0v; f =250khz diagram15:typ.cossstoredenergy v ds [v] e oss [j] 0 100 200 300 400 500 600 700 800 0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 1.80 2.00 e oss = f (v ds ) tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
10 800vcoolmosap7powertransistor IPS80R1K4P7 rev.2.0,2016-07-05 final data sheet 5testcircuits table8diodecharacteristics table9switchingtimes table10unclampedinductiveload tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d
11 800vcoolmosap7powertransistor IPS80R1K4P7 rev.2.0,2016-07-05 final data sheet 6packageoutlines figure1outlinepg-to251,dimensionsinmm/inches tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d dim a 2.0 01-04-2016 issue date european projection 0.031 0.018 0.018 0.236 0.026 0.181 0.254 0.118 0.087 0.205 0.035 0.026 0.198 millimeters 4.60 3.00 0.90 3 2.28 4.56 min 0.80 0.46 0.65 6.00 0.46 6.45 2.20 0.64 5.04 5.10 1.25 3.60 0.89 6.70 0.89 6.22 0.59 1.15 1.14 2.35 max 5.50 5.55 min 0.201 3 0.090 0.180 0.049 0.142 inches max 0.023 0.045 0.245 0.023 0.033 0.093 0.044 0.264 0.217 0.219 0 2.0 scale 4mm 0 document no. z8b00003329 revision 07 0.031 0.80 1.20 0.047 a1 b b2 b4 c c2 d d1 e e1 e e1 n l l1 l2 5.20
12 800vcoolmosap7powertransistor IPS80R1K4P7 rev.2.0,2016-07-05 final data sheet 7appendixa table11relatedlinks ? ifxcoolmoswebpage: www.infineon.com ? ifxdesigntools: www.infineon.com tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d dim a 2.0 01-04-2016 issue date european projection 0.031 0.018 0.018 0.236 0.026 0.181 0.254 0.118 0.087 0.205 0.035 0.026 0.198 millimeters 4.60 3.00 0.90 3 2.28 4.56 min 0.80 0.46 0.65 6.00 0.46 6.45 2.20 0.64 5.04 5.10 1.25 3.60 0.89 6.70 0.89 6.22 0.59 1.15 1.14 2.35 max 5.50 5.55 min 0.201 3 0.090 0.180 0.049 0.142 inches max 0.023 0.045 0.245 0.023 0.033 0.093 0.044 0.264 0.217 0.219 0 2.0 scale 4mm 0 document no. z8b00003329 revision 07 0.031 0.80 1.20 0.047 a1 b b2 b4 c c2 d d1 e e1 e e1 n l l1 l2 5.20
13 800vcoolmosap7powertransistor IPS80R1K4P7 rev.2.0,2016-07-05 final data sheet revisionhistory IPS80R1K4P7 revision:2016-07-05,rev.2.0 previous revision revision date subjects (major changes since last revision) 2.0 2016-07-05 release of final version trademarksofinfineontechnologiesag aurix?,c166?,canpak?,cipos?,coolgan?,coolmos?,coolset?,coolsic?,corecontrol?,crossave?,dave?,di-pol?,drblade?, easypim?,econobridge?,econodual?,econopack?,econopim?,eicedriver?,eupec?,fcos?,hitfet?,hybridpack?,infineon?, isoface?,isopack?,i-wafer?,mipaq?,modstack?,my-d?,novalithic?,omnitune?,optiga?,optimos?,origa?,powercode?, primarion?,primepack?,primestack?,profet?,pro-sil?,rasic?,real3?,reversave?,satric?,sieget?,sipmos?,smartlewis?, solidflash?,spoc?,tempfet?,thinq?,trenchstop?,tricore?. trademarksupdatedaugust2015 othertrademarks allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. welistentoyourcomments anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com publishedby infineontechnologiesag 81726mnchen,germany ?2016infineontechnologiesag allrightsreserved. legaldisclaimer theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.with respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. information forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestinfineon technologiesoffice( www.infineon.com ). warnings duetotechnicalrequirements,componentsmaycontaindangeroussubstances.forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. theinfineontechnologiescomponentdescribedinthisdatasheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d dim a 2.0 01-04-2016 issue date european projection 0.031 0.018 0.018 0.236 0.026 0.181 0.254 0.118 0.087 0.205 0.035 0.026 0.198 millimeters 4.60 3.00 0.90 3 2.28 4.56 min 0.80 0.46 0.65 6.00 0.46 6.45 2.20 0.64 5.04 5.10 1.25 3.60 0.89 6.70 0.89 6.22 0.59 1.15 1.14 2.35 max 5.50 5.55 min 0.201 3 0.090 0.180 0.049 0.142 inches max 0.023 0.045 0.245 0.023 0.033 0.093 0.044 0.264 0.217 0.219 0 2.0 scale 4mm 0 document no. z8b00003329 revision 07 0.031 0.80 1.20 0.047 a1 b b2 b4 c c2 d d1 e e1 e e1 n l l1 l2 5.20

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